Method of fabricating field effect transistor with fin structure and field effect transistor with fin structure fabricated therefrom

摘要

A method of fabricating a field effect transistor with a fin structure is described. At least a fin structure is formed on a substrate. A planar insulation layer covering the fin structure is formed. A trench is formed in the insulation layer and intersects the fin structure both lengthwise, and thereby an upper portion of the fin structure is exposed to the trench. The exposed upper portion of the fin structure will serve as a gate channel region. A gate structure covering the upper portion is formed within the trench. The upper portion of the fin structure may be further trimmed. Accordingly, the present invention also relates to a field effect transistor with a fin structure, in which, the channel width is less than the source/drain width, and a gate structure has two sidewalls contacting two opposite sidewalls of a source region and a drain region, respectively.