首页> 外国专利> TUNGSTEN OXIDE PHOTOCATALYST MODIFIED WITH COPPER ION, AND PROCESS FOR PRODUCTION THEREOF

TUNGSTEN OXIDE PHOTOCATALYST MODIFIED WITH COPPER ION, AND PROCESS FOR PRODUCTION THEREOF

机译:铜离子修饰的氧化钨光催化剂及其生产方法

摘要

The present invention relates to a copper ion-modified tungsten oxide photocatalyst subjected to chemical etching treatment with a basic aqueous solution in which a rate of change in diffuse reflectance of the photocatalyst as measured at a wavelength of 700 nm between before and after irradiated with an ultraviolet light in atmospheric air is less than 10%; and a process for producing a copper ion-modified tungsten oxide photocatalyst which includes a copper ion modifying step of modifying a tungsten oxide powder with a copper ion; a chemical etching step of subjecting the tungsten oxide powder to chemical etching treatment with a basic aqueous solution, the chemical etching treatment being carried out either before or after the copper ion modifying step; and a drying step of drying the product obtained after the above steps at a temperature of 200° C. or lower.
机译:铜离子改性氧化钨光催化剂技术领域本发明涉及用碱性水溶液进行化学蚀刻处理的铜离子改性氧化钨光催化剂,其中,在以700nm的波长照射前后,测定了光催化剂的扩散反射率的变化率。大气中的紫外线小于10%;本发明的铜离子改性氧化钨光催化剂的制造方法包括:用铜离子对氧化钨粉末进行改性的铜离子改性步骤。化学蚀刻步骤,用碱性水溶液对氧化钨粉末进行化学蚀刻处理,该化学蚀刻处理在铜离子改性步骤之前或之后进行;干燥工序是将上述工序后得到的产物在200℃以下的温度下干燥的工序。

著录项

  • 公开/公告号US2013053238A1

    专利类型

  • 公开/公告日2013-02-28

    原文格式PDF

  • 申请/专利权人 YASUHIRO HOSOGI;

    申请/专利号US201113579224

  • 发明设计人 YASUHIRO HOSOGI;

    申请日2011-02-15

  • 分类号B01J23/30;

  • 国家 US

  • 入库时间 2022-08-21 16:47:45

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