Method for design and manufacture of diagonal patterns with variable shaped beam lithography

摘要

A method for fracturing or mask data preparation or optical proximity correction is disclosed, wherein a plurality of variable shaped beam (VSB) shots are determined for at least one exposure pass, where the plurality of VSB shots forms a line pattern which is at a diagonal to the axes of a Cartesian coordinate plane, and where at least two neighboring shots in the same exposure pass overlap. Methods for manufacturing a surface using charged particle beam lithography and for manufacturing an integrated circuit using an optical lithography process are also disclosed.