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Method for treating the dislocation in a GaN-containing semiconductor layer
Method for treating the dislocation in a GaN-containing semiconductor layer
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机译:处理含GaN的半导体层中的位错的方法
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摘要
A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.
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