Method for modeling a magnetic tunnel junction with spin-polarized current writing

摘要

The junction comprising a stack of at least two magnetic layers, a first layer, for example a soft magnetic layer with controllable magnetization, and a second layer, for example a hard magnetic layer with fixed magnetization, the magnetization of the soft layer being described by a uniform magnetic moment, the dynamic behavior of the junction being modeled by an equivalent electrical circuit comprising at least two coupled parts: a first part representing the stack of the layers, through which a current flows corresponding to the polarized current flowing through said layers whose resistance across its terminals depends on three voltages representing the three dimensions of the magnetic moment along three axes, modeling the tunnel effect; a second part representing the behavior of the magnetic moment, comprising three circuits each representing a dimension of the magnetic moment by the three voltages, each of the three voltages depending on the voltages in the other dimensions and on the voltage across the terminals of the stack, modeling the torque effect exerted by the polarized current on the magnetization of the soft layer.