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Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
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机译:大面积非极性或半极性含镓和氮的衬底和所得器件
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摘要
A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.
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