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Semiconductor device formed by a replacement gate approach based on an early work function metal
Semiconductor device formed by a replacement gate approach based on an early work function metal
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机译:通过基于早期功函数金属的替代栅极方法形成的半导体器件
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摘要
In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.
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