Scaled equivalent oxide thickness for field effect transistor devices

摘要

A method for forming a field effect transistor device includes forming an oxide layer on a substrate, forming a dielectric layer on the oxide layer, forming a first TiN layer on the dielectric layer, forming a metallic layer on the first layer, forming a second TiN layer on the metallic layer, removing a portion of the first TiN layer, the metallic layer, and the second TiN layer to expose a portion of the dielectric layer, forming a layer of stoichiometric TiN on the exposed portion of the dielectric layer and the second TiN layer, heating the device, and forming a polysilicon layer on the device.