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SCALED EQUIVALENT OXIDE THICKNESS FOR FIELD EFFECT TRANSISTOR DEVICES
SCALED EQUIVALENT OXIDE THICKNESS FOR FIELD EFFECT TRANSISTOR DEVICES
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机译:场效应晶体管器件的标称等效氧化物厚度
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摘要
A field effect transistor device includes a first gate stack portion including a dielectric layer disposed on a substrate, a first TiN layer disposed on the dielectric layer, a metallic layer disposed on the dielectric layer, and a second TiN layer disposed on the metallic layer, a first source region disposed adjacent to the first gate stack portion, and a first drain region disposed adjacent to the first gate stack portion.
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