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Gallium nitride-based III-V group compound semiconductor device and method of manufacturing the same
Gallium nitride-based III-V group compound semiconductor device and method of manufacturing the same
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机译:氮化镓基III-V族化合物半导体器件及其制造方法
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摘要
The present invention relates to a gallium nitride-based compound semiconductor device and a method of manufacturing the same. According to the present invention, there is provided a gallium nitride-based III-V group compound semiconductor device comprising a gallium nitride-based semiconductor layer and an ohmic electrode layer formed on the gallium nitride-based semiconductor layer. The ohmic electrode layer comprises a contact metal layer, a reflective metal layer, and a diffusion barrier layer.
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