SILICON ON INSULATOR (SOI) CMOS WAFER FOR USE IN MANUFACTURE OF AN UNCOOLED INFRARED DETECTOR AND METHODS FOR MANUFACTURING THE SAME

摘要

This disclosure discusses an infrared detector manufactured from a foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafer, the infrared detector comprising a plurality of walls forming a through well defining a first opening and a second opening opposing the first opening; an infrared sensor configured to detect an infrared wave passing through one of the first opening or the second opening of the through well; and a support arm connecting the sensor to at least one of the plurality of walls so as to suspend the infrared sensor within the through well and adjacent to the first opening.