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Silicon-on-insulator (soi) cmos wafer for use in manufacture of an uncooled infrared detector and methods for manufacturing the same
Silicon-on-insulator (soi) cmos wafer for use in manufacture of an uncooled infrared detector and methods for manufacturing the same
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机译:用于制造非冷却红外探测器的绝缘体上硅(soi)cmos晶片及其制造方法
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摘要
This disclosure discusses an infrared detector manufactured from a foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafer, the infrared detector comprising a plurality of walls forming a through well defining a first opening and a second opening opposing the first opening; an infrared sensor configured to detect an infrared wave passing through one of the first opening or the second opening of the through well; and a support arm connecting the sensor to at least one of the plurality of walls so as to suspend the infrared sensor within the through well and adjacent to the first opening.
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