首页> 外国专利> SEMICONDUCTOR DEVICE AND METHOD OF FORMING PROTECTIVE MATERIAL BETWEEN SEMICONDUCTOR DIE STACKED ON SEMICONDUCTOR WAFER TO REDUCE DEFECTS DURING SINGULATION

SEMICONDUCTOR DEVICE AND METHOD OF FORMING PROTECTIVE MATERIAL BETWEEN SEMICONDUCTOR DIE STACKED ON SEMICONDUCTOR WAFER TO REDUCE DEFECTS DURING SINGULATION

机译:半导体装置和形成在堆叠在半导体晶片上的半导体管芯之间的保护材料的方法,以减少分离期间的缺陷

摘要

Abstract SEMICONDUCTOR DEVICE AND METHOD OF FORMING PROTECTIVE MATERIALBETWEEN SEMICONDUCTOR DIE STACKED ON SEMICONDUCTOR WAFER TO REDUCE DEFECTS DURING SINGULATIONA semiconductor wafer contains first semiconductor die. TSVs are formed through the semiconductor wafer. Second semiconductor die are mounted to a first surface of the semiconductor wafer. A first tape is applied to on a second surface of the semiconductor wafer. A protective material is formed over the second die and first surface of the wafer. The protective material can be encapsulant or polyvinyl alcohol and water. The wafer is singulated between the second die into individual die-to-wafer packages each containing the second die stacked on the first die. The protective material protects the wafer during singulation. The die-to-wafer package can be mounted to a substrate. A build-up interconnect structure can be formed over the die-to-wafer package. The protective material can be removed. Underfill material can be deposited beneath the first and second die. An encapsulant is deposited over the die-to-wafer package.(Fig. 5)
机译:抽象半导体装置及形成保护材料的方法堆叠在半导体晶片上的半导体芯片之间,可减少切单时的缺陷半导体晶片包含第一半导体管芯。贯穿半导体晶片形成TSV。第二半导体管芯被安装到半导体晶片的第一表面。第一带被施加到半导体晶片的第二表面上。在晶片的第二管芯和第一表面上方形成保护材料。保护材料可以是密封剂或聚乙烯醇和水。晶片在第二管芯之间被分割为单独的管芯到晶片的封装,每个封装都包含堆叠在第一管芯上的第二管芯。保护材料在分割期间保护晶片。晶片到晶片封装可以安装到衬底上。可以在管芯对晶片的封装上方形成积层互连结构。可以去除保护材料。底部填充材料可以沉积在第一模具和第二模具下方。密封剂沉积在管芯晶圆封装上。(图5)

著录项

  • 公开/公告号SG189742A1

    专利类型

  • 公开/公告日2013-05-31

    原文格式PDF

  • 申请/专利权人 STATS CHIPPAC LTD;

    申请/专利号SG20130024948

  • 发明设计人 LIM TAEGKI;YUN JAEUN;LEE SUNGYOON;

    申请日2010-10-14

  • 分类号

  • 国家 SG

  • 入库时间 2022-08-21 16:39:29

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