Method for manufacturing dimensional structures submicron scale lithography combined with two resistive layers

摘要

Lithographic method for making three-dimensional structures micron-scale and submicron-scale, including the steps of: - providing a substrate (S), - depositing on said substrate (S) a layer (L1) of a first polymeric material (R1) sensitive the apartículas exposure charged or electromagnetic radiation, - depositing, on the layer (L1) of the first material (R1), a layer (L ') of a second polymeric material (R2) sensitive to exposure to charged particles or radiation electromagnetic, differently to laprimera, so that the processes of exposure and development of the two materials (R1, R2) are mutuamenteincompatibles to the point that exposure or development of one does not interfere with the exposure and delotro development - forming a pattern in the second material (R2) by a lithographic process, comprising the steps of: * exposing the layer (L ') of said material (R2) to charged particles or a electromagnetic radiation according unatopografía predetermined to define a first and a second part of said layer, exposed and expuestarespectivamente to said particles or said radiation, and * after selectively removing one of said first and second portions of the layer ( L ') of queregiones way of the first material (R1) left uncovered, * deposit on the patterned layer (L') of the second material (R2) and on exposed regions of primermaterial (R1), an additional layer (L2 ) of said first material (R1), and * form a pattern on the first material (R1) by a lithographic process, comprising the steps of: · exposing the layer (L1) of said material (R1) to charged particles or a unatopografía predetermined electromagnetic radiation according to define a first and a second part of said layer, exposed and expuestarespectivamente to said particles or said radiation, · remove after selectively one of said first and second portions of the layer (L1); It is the second material (R2) transparent to particles or electromagnetic radiation to which the primermaterial (R1) is sensitive.