NANO MULTILAYER FILM, FIELD EFFECT TUBE, SENSOR, RANDOM ACCESSORY MEMORY AND PREPARATION METHOD

摘要

Disclosed are a nano multilayer film of electrical field modulation type, a field effect tube of electrical field modulation type, an electrical field sensor of switch type, and a random accessory memory of electrical field drive type, for obtaining an electro-resistance effect in an electrical field modulation multilayer film at room temperature. The nano multiplayer film comprises in succession from bottom to top an underlying layer (102), a substrate (101), an underlying layer (103), a functional layer (104), a buffer layer (105), an insulation layer (106), an intermediate conductive layer (107), and a cover layer (108), and the buffer layer (105) and the insulation layer (106) can be selectively added as required when the intermediate conductive layer (107) is a magnetic metal, a magnetic alloy or a magnetic metal composite layer. When the intermediate conductive layer (107) is a non-magnetic metal layer or an anti-ferromagnetic metal layer, the buffer layer (105) and the insulation layer (106) must be added in order to obtain a relatively high signal to noise ratio. The effect of influencing and changing the conductivity of the metal layer and thus adjusting the change in the resistance of the devices can be achieved by modulating the electrical polarization of the ferroelectric or multi-ferric materials with varied electrical fields, thereby obtaining different resistance states corresponding to different electrical fields and achieving an electro-resistance effect.