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DIELECTRIC CERAMIC COMPOSITION FOR HIGH-FREQUENCY USE AND METHOD FOR PRODUCING THE SAME, DIELECTRIC CERAMIC FOR HIGH-FREQUENCY USE AND METHOD FOR PRODUCING THE SAME, AND HIGH-FREQUENCY CIRCUIT ELEMENT USING THE SAME
DIELECTRIC CERAMIC COMPOSITION FOR HIGH-FREQUENCY USE AND METHOD FOR PRODUCING THE SAME, DIELECTRIC CERAMIC FOR HIGH-FREQUENCY USE AND METHOD FOR PRODUCING THE SAME, AND HIGH-FREQUENCY CIRCUIT ELEMENT USING THE SAME
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机译:高频使用的介电陶瓷及其制造方法,高频使用的介电陶瓷及其制造方法以及使用该电路的高频电路元件
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摘要
There is provided a dielectric ceramic composition for high-frequency use represented by a composition formula of a(Sn,Ti)O2-bMg2SiO4-cMgTi2O5-dMgSiO3. In the composition formula, a, b, c and d (provided that a, b, c and d are mol%) are within the following ranges: 4≤a≤37, 34≤b≤92, 2≤c≤15 and 2≤d≤15, respectively, and a+b+c+d=100. The dielectric ceramic composition for high-frequency use has a relative permittivity εr of 7.5-12.0, a Qm×fo value of not less than 50000 (GHz) and an absolute value of a temperature coefficient τf of resonance frequency fo of not more than 30 ppm/°C.
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机译:提供了一种由a(Sn,Ti)O 2 -bMg 2 SiO 4 -cMgTi 2 O 5 -dMgSiO 3的组成式表示的高频电介质陶瓷组合物。在组成式中,a,b,c和d(假设a,b,c和d为mol%)在以下范围内:4≤a≤37、34≤b≤92、2≤c≤15和2≤d≤15,并且a + b + c + d = 100。高频用介电陶瓷组合物的相对介电常数εr为7.5-12.0,Qm×fo值为50000(GHz)以上,共振频率fo的温度系数τf的绝对值为30以下。 ppm /℃。
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