METHOD FOR PREPARING GRAPHENE ON SIC SUBSTRATE BASED ON ANNEALING WITH ASSISTANT METAL FILM

摘要

Provided are a method for preparing a graphene on SiC substrate based on annealing with assistant metal film and a double-layer graphene prepared thereby. The method comprises: normally cleaning the SiC substrate; introducing the cleaned SiC substrate into a quartz tube and heating it to 750-1150°C; inputting a CCl₄ steam in the quartz tube with Ar gas and reacting with SiC to form a double-layer carbon film, wherein the reaction time is 20-100min; forming a metal film of 350-600nm on the SiC substrate via electron beam deposition; disposing the double-layer carbon film on the metal film and putting them all in Ar gas, annealing at the temperature of 900-1100°C for 10-30min to reconstruct the double-layer carbon film to form double-layer graphene; taking out of the metal film from the double-layer graphene sample wafer and obtaining a double-layer graphene.