首页> 外国专利> METHOD FOR USING CARBON SOURCE HAVING MULTIPLE BENZENE RINGS TO GROW GRAPHENE OVER LARGE AREA BY CHEMICAL VAPOR DEPOSITION AT LOW TEMPERATURE

METHOD FOR USING CARBON SOURCE HAVING MULTIPLE BENZENE RINGS TO GROW GRAPHENE OVER LARGE AREA BY CHEMICAL VAPOR DEPOSITION AT LOW TEMPERATURE

机译:低温化学气相沉积法利用具有多个苯环的碳源在大面积上生长石墨烯的方法

摘要

Disclosed is a preparation method for using a carbon source having multiple benzene rings to grow graphene over a large area by chemical vapor deposition at a low temperature. The method comprises: using an aromatic hydrocarbon having multiple benzene rings as a carbon source, growing graphene on the surface of a copper foil by a carbon source decomposition process or a carbon source spin-coating process; and the aromatic hydrocarbon having multiple benzene rings being benzene or a fused-ring aromatic hydrocarbon.
机译:公开了一种使用具有多个苯环的碳源通过低温化学气相沉积在大面积上生长石墨烯的制备方法。该方法包括:使用具有多个苯环的芳族烃作为碳源,通过碳源分解工艺或碳源旋涂工艺在铜箔表面上生长石墨烯。具有多个苯环的芳族烃为苯或稠环芳族烃。

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