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Low-temperature growth of graphene by chemical vapor deposition using solid and liquid carbon sources

机译:使用固态和液态碳源通过化学气相沉积法低温生长石墨烯

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Graphene has attracted a lot of research interest owing to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000 °C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400 °C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300 °C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to an undemanding route for economical and convenient graphene growth.
机译:石墨烯因其奇异的性质和广泛的潜在应用而吸引了许多研究兴趣。从气态碳氢化合物来源进行的化学气相沉积(CVD)已显示出大规模石墨烯生长的广阔前景。但是,这种生长需要高的生长温度,通常为1000°C。在这里,我们展示了采用固态和液态碳氢化合物原料的经修改的CVD路线,该路线可在低温下在铜箔上生长石墨烯。对于固态PMMA和聚苯乙烯前体,可在低至400°C的生长温度下合成厘米级单层石墨烯薄膜。当苯用作烃源时,在低至300°C的生长温度下可获得质量优异的单层石墨烯薄片。从第一个原理计算中可以定性地了解成功的低温生长。我们的工作可能为经济和方便的石墨烯生长铺平道路。

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