LIGHT EMITTING DEVICES WITH EMBEDDED VOID-GAP STRUCTURES THROUGH TECHNIQUES OF CLOSURE OF VOIDS

摘要

A method of fabricating optoelectronic devices with embedded void-gap structures on semiconductor layers is provided. The embedded void-gaps are fabricated on a semiconductor structure by first fabricating patterns in a semiconductor layer, such as arrays of holes or trenches, then embedding these by closing the holes or trenches with semiconductor material brought by thermal treatment or from the vapor phase surrounding the structure.