Fabrication method of CuO thin film and TFT and it manufacturing the same method, CuO thin film transistor

摘要

PURPOSE: A method for forming a CuO thin film, a method for manufacturing an oxide thin film transistor, the oxide thin film transistor manufactured by the same, and the oxide thin film transistor with a CuO thin film are provided to improve electric field effect mobility and an on-off ratio by forming a CuO thin film at a low temperature. CONSTITUTION: A Cu2O thin film is formed by sputtering under Ar gas and O2 gas atmospheres(S1000). A Cu2O thin film is changed into a CuO thin film by a thermal process(S2000). A ratio of Ar gas to O2 gas is 4 : 1. A heating temperature of a thermal process is 100 to 500 degrees centigrade. The thermal process is performed under an air atmosphere. [Reference numerals] (AA) Start; (BB) End; (S1000) Forming a Cu2O thin film by sputtering under an atmosphere with a gas ratio of Ar gas : O2 gas that is 4:1; (S2000) Converting Cu2O into CuO through a thermal process