High-Sensitive Measuring Method and Apparatus for Self-Assembly Monolayer on Gold Surface using Infrared Reflection and Self-Assembly Substrate

摘要

The present invention relates to a method highly sensitive measurements in the self-assembled layer above the gold thin film formation process using infrared spectroscopy and relates to a self-assembled layer forming device and its base material used, and more specifically by using a 3-nm gold layer forming the self-assembled film is formed under the substrate on both sides of the silicon, which has a rectangular cross-section of the self-assembled layer over the gold film This growth will be so easily done. In addition, the self-assembled layer is irradiated with light from the infrared light source at an angle to form a self-assembled monolayer formed inside the substrate, and the light emitted from the multiple reflections between two gold thin layer of self-assembled growth of self-assembled layer by an amplified signal would like to enable this without the need for highly skilled technique for precise measurements to determine the level of the substrate and the measuring method and apparatus that can improve the quality and bio-chip manufacturing time shortened by the self-assembled layer growth. ;