METHOD FOR MANUFACTURING A SEMICONDUCTOR PACKAGE CAPABLE OF IMPLEMENTING A HEAT RADIATION EFFECT IN A WAFER PROCESSING STEP

摘要

PURPOSE: A method for manufacturing a semiconductor package is provided to easily discharge heat to the outside by processing a heat radiation plate on a wafer level.;CONSTITUTION: A first area of a heat radiation plate is removed by a first depth smaller than the thickness of the heat radiation plate(S100). The heat radiation plate is laminated on the inactive side of a wafer(S110). A plurality of dies is formed along a second area(S120). A molding member is formed on a part of the heat radiation plate(S130). A redistribution layer is formed on the active side of the wafer(S140).;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Start; (BB) End; (S100) Step for removing a first area of a heat radiation plate in a first depth smaller than the thickness of the heat radiation plate; (S110) Step for laminating the heat radiation plate on an inactive side of the wafer; (S120) Step for forming a plurality of dies by cutting the heat radiation plate and the wafer along a second area included in the first area of the heat radiation plate; (S130) Step for forming a molding member to cover the gap between the dies and expose a part of the upper surface of the heat radiation to the outside; (S140) Step for forming a redistribution layer electrically connected to an active side of the wafer; (S150) Step for forming an outside connection means connected to the redistribution layer; (S160) Step for cutting the molding member along a third area line included in the gap between the dies in which the molding member is formed