The present invention is (a) HSiO 3/2 units and RSiO 3/2 chamber containing an access unit (wherein , R is an acid -dissociable group ) silsesquioxane resin and (b) 7- chamber containing diethyl amino-4-methyl coumarin -based silsesquioxane relates to a composition . Art silsesquioxane -based composition , especially a multilayer (i.e. , dual-layer ) is useful as a positive resist composition for forming a patterned feature on the substrate for 193 and 157 field of photolithography .
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