DEVICE FOR MEASURING A VIA-HOLE OF A SILICON WAFER AND A METHOD THEREOF, CAPABLE OF ACCURATELY MEASURING THE DEPTH AND THE DIAMETER OF THE VIA-HOLE WITHOUT DAMAGING TO THE WAFER

摘要

PURPOSE: A device for measuring a via-hole of a silicon wafer and a method thereof are provided to measure the depth and the diameter of the via-hole of the silicon wafer at a high speed and high precision.;CONSTITUTION: A device for measuring a via-hole of a silicon wafer comprises a light source unit(1) and an interferometer(2). The light source unit generates infrared lights of a broadband. The interferometer senses interference signals generated by reflecting the infrared lights of the broadband by a floor surface of the via-hole, a boundary surface of a front surface of a rear surface of the silicon wafer and measures the depth and the diameter of the via-hole by simultaneously obtaining an optical passage difference with respect to a plurality of frequency components through a spectrum cycle analysis of the interference signals.;COPYRIGHT KIPO 2013