POWER SEMICONDUCTOR DEVICE WITH AN IMPROVED BREAKDOWN VOLTAGE PROPERTY AND AN ON-RESISTANCE PROPERTY

摘要

PURPOSE: A power semiconductor device is provided to obtain a high breakdown voltage by reducing electric field crowding generated in the edge part of a P-N junction structure with a stripe shape.;CONSTITUTION: An active region(120) is formed with a preset thickness and density on a semiconductor substrate(110) and includes n type first regions and p type second regions. An impurity region(130) includes a p type well region(131) and an n type source region(133). A gate region(140) overlaps a source region in a p well region. A source electrode(150) is electrically connected to the source region.;COPYRIGHT KIPO 2013