首页>
外国专利>
VAPOR PHASE GROWING METHOD AND A VAPOR PHASE GROWING APPARATUS CAPABLE OF STABLY ADJUSTING THE PRESSURE WITHIN A REACTION CHAMBER
VAPOR PHASE GROWING METHOD AND A VAPOR PHASE GROWING APPARATUS CAPABLE OF STABLY ADJUSTING THE PRESSURE WITHIN A REACTION CHAMBER
展开▼
机译:能够在反应室内稳定调节压力的气相生长方法和气相生长装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A vapor phase growing method and a vapor phase growing apparatus are provided to control the electric consumption of a dry pump in a deposition process.;CONSTITUTION: A first valve is connected to a reaction chamber and controls the flow rate of exhaust gas. The first valve discharges the exhaust gas. A first pressure manometer(14a) detects the pressure of the reaction chamber. A second pressure manometer(14b) detects the pressure between the first valve and a first pump. A first pressure control unit(15a) controls the first valve based on a first pressure. A second pressure control unit(15b) controls the operation of the first pump based on a second pressure.;COPYRIGHT KIPO 2013;[Reference numerals] (11) Reaction chamber; (12) Throttle valve; (13) Drier pump; (14a,14b) Pressure manometer; (15a,15b) Pressure control unit
展开▼