首页> 外国专利> VAPOR PHASE GROWING METHOD AND A VAPOR PHASE GROWING APPARATUS CAPABLE OF STABLY ADJUSTING THE PRESSURE WITHIN A REACTION CHAMBER

VAPOR PHASE GROWING METHOD AND A VAPOR PHASE GROWING APPARATUS CAPABLE OF STABLY ADJUSTING THE PRESSURE WITHIN A REACTION CHAMBER

机译:能够在反应室内稳定调节压力的气相生长方法和气相生长装置

摘要

PURPOSE: A vapor phase growing method and a vapor phase growing apparatus are provided to control the electric consumption of a dry pump in a deposition process.;CONSTITUTION: A first valve is connected to a reaction chamber and controls the flow rate of exhaust gas. The first valve discharges the exhaust gas. A first pressure manometer(14a) detects the pressure of the reaction chamber. A second pressure manometer(14b) detects the pressure between the first valve and a first pump. A first pressure control unit(15a) controls the first valve based on a first pressure. A second pressure control unit(15b) controls the operation of the first pump based on a second pressure.;COPYRIGHT KIPO 2013;[Reference numerals] (11) Reaction chamber; (12) Throttle valve; (13) Drier pump; (14a,14b) Pressure manometer; (15a,15b) Pressure control unit
机译:目的:提供一种气相生长方法和一种气相生长设备,以控制沉积过程中干泵的电耗。组成:第一阀连接到反应室并控制废气的流量。第一阀排出废气。第一压力计(14a)检测反应室的压力。第二压力计(14b)检测第一阀和第一泵之间的压力。第一压力控制单元(15a)基于第一压力来控制第一阀。第二压力控制单元(15b)基于第二压力来控制第一泵的操作。COPYRIGHTKIPO 2013; [附图标记](11)反应室;和(12)节气门; (13)干燥泵; (14a,14b)压力计; (15a,15b)压力控制单元

著录项

  • 公开/公告号KR20130011925A

    专利类型

  • 公开/公告日2013-01-30

    原文格式PDF

  • 申请/专利权人 NUFLARE TECHNOLOGY INC.;

    申请/专利号KR20120075034

  • 发明设计人 MORIYAMA YOSHIKAZU;SATO YUUSUKE;

    申请日2012-07-10

  • 分类号H01L21/205;C23C16/44;

  • 国家 KR

  • 入库时间 2022-08-21 16:27:48

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