METHOD FOR PREPARING SELECTIVE EMITTER LAYER, SELECTIVE EMITTER LAYER PREPARED BY THE SAME, AND SILICONE SOLAR-CELL COMPRISING THE SAME

摘要

PURPOSE: A method for manufacturing a selective emitter layer, the selective emitter layer manufactured thereby, and a silicon solar cell including the same are provided to have an easily controlled doping profile for the selective emitter layer by performing a high temperature heat treatment for forming a high doped region. CONSTITUTION: A p-type impurity doped crystalline silicon substrate(401) is prepared. A first impurity source is laminated on the silicon substrate. A first heat treatment is performed on the substrate including a first impurity source. A high doped region(403) of a selective emitter layer is formed on the silicon substrate. A low doped region(404) is formed on the entire substrate by using a second impurity source.