NONVOLATILE MEMORY DEVICE AND AN OPERATING METHOD THEREOF CAPABLE OF CONTROLLING A PASS AND FAIL CHECK CIRCUIT

摘要

PURPOSE: A nonvolatile memory device and an operating method thereof are provided to reduce operation time by skipping the pass and fail check operations of the remaining page buffer groups if at least one page buffer group is failed.;CONSTITUTION: A plurality of page buffer groups(1500) are composed of a plurality of page buffers connected to bit lines of a memory cell block. A pass and fail check circuit(1600) is connected to the plurality of page buffers and performs a pass and fail check operation to compare the sum of a current quantity changed according to verification data stored in each page buffer with a reference current quantity corresponding to the number of error correctable allowable bits. A control circuit(1200) controls the pass and fail check circuit to successively perform the pass and fail check operations of the plurality of page buffer groups and to stop the pass and fail check operations of the remaining page buffer groups if a fail signal is generated in the pass and fail check operation of the current page buffer group.;COPYRIGHT KIPO 2013;[Reference numerals] (1200) Control circuit; (1300) Voltage generating circuit; (1400) Low decoder; (1600) Pass and fail check circuit; (AA) Normal memory cell array; (BB) Flag cell array;