SLURRY COMPOSITION CAPABLE OF IMPROVING FLATNESS OF A PHASE CHANGE MATERIAL LAYER BY PREVENTING REMAINING OF OTHER PARTICLES ON A PHASE CHANGE MATERIAL LAYER, BY A FIRST ABSORPTION INHIBITOR, AND A MANUFACTURING METHOD OF A PHASE CHANGE MATERIAL USING THE SAME

摘要

PURPOSE: A slurry composition is provide to improve polishing rate of a phase change material and to prevent re-absorption of the phase change material to a pattern layer of the phase change material, thereby improving performance of a phase change memory device.;CONSTITUTION: A slurry composition for polishing comprises a first absorption inhibitor which contains a polishing agent, oxidant, and polyethyleneoxide-based copolymer. The slurry composition comprises the first absorption inhibitor which has an abrasive agent, oxidant, ethylene oxide, and propylene oxide as repeating units; and a second absorption inhibitor containing an anionic surfactant which can be coupled with the first absorption inhibitor. The first absorption inhibitor is represented by chemical formula 1. In chemical formula 1, n is an integer from 1-500 and m is an integer from 1-300.;COPYRIGHT KIPO 2013