PHOTOSENSITIVITY NOVOLAK RESIN WITH EXCELLENT SENSITIVITY AND HIGH RESIDUAL FILM RATE, A POSITIVE PHOTOSENSITIVE RESIN COMPOSITION INCLUDING THE SAME, A PHOTORESIST MANUFACTURED BY USING THE SAME, AND A SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

PURPOSE: A photosensitivity novolak resin is provided to apply to a positive photosensitive resin composition as highly efficient photoresist to produce positive photosensitive resin composition with excellent sensitivity and high residual film rate.;CONSTITUTION: A photosensitivity novolak resin comprises a structure unit of the following chemical formula 1 and a structure unit of the following chemical formula 2. The R^11 and the R^12 are independently hydrogen or a quinone diazide sulfonyl group. Fifty or more percent of the R^11 and the R^12 in the photosensitivity novolak resin is quinone diazide sulfonyl groups. The R^13 and the R^14 are Independently C1-7 alkyl groups. When the number of structure unit in the photosensitivity novolak resin is x and the number of structure unit in the chemical formula 2 is y, x+y is within the range of 2-30 and x / (x+y) is within the range of 0.6-0.95.;COPYRIGHT KIPO 2013