SENSE AMPLIFIER CIRCUIT OF A NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE TO PERFORM A LOW-VOLTAGE DRIVING OPERATION IN A READ OPERATION

摘要

PURPOSE: A sense amplifier circuit of a non-volatile semiconductor memory device is provided to properly control sensing speed and power consumption to be suitable for the purpose of a product by directly controlling sensing current.;CONSTITUTION: A reference voltage generator (200) generates a reference voltage on a reference node by depending on a current flowing in a reference data line connected to a reference bit line. A sensing voltage generator (100) generates a sensing voltage on a sensing node. The sensing voltage generator is formed to make a load transistor supplying current to a data line be directly connected to a clamping node and be controlled in a way of the operation of a current mirror circuit. A comparator (300) senses data stored in a memory cell connected to a bit line by sensing and amplifying the difference between the reference voltage of the reference node and the sensing voltage of the sensing node.;COPYRIGHT KIPO 2013