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BLOCK COPOLYMER, A COPOLYMER COMPOSITION FORMING A PERIODIC NANOSTRUCTURE SUCH AS A LINE/SPACE PATTERN ON A SUBSTRATE CONTAINING SILICONE IN A RANGE OF 20-40 NM AND A METHOD RELATING WITH THE SAME
BLOCK COPOLYMER, A COPOLYMER COMPOSITION FORMING A PERIODIC NANOSTRUCTURE SUCH AS A LINE/SPACE PATTERN ON A SUBSTRATE CONTAINING SILICONE IN A RANGE OF 20-40 NM AND A METHOD RELATING WITH THE SAME
PURPOSE: A copolymer composition is provided to exhibit rapid annealing property with a low defect formation and be patterned in a middle length scale (for example, 20-40 nm).;CONSTITUTION: A copolymer composition comprises a block copolymer which has a poly(methyl methacrylate) block and a poly((trimethylsilyl)methyl methacrylate) block. Here, the block copolymer exhibits a number average molecular weight (M_N) of 1-1,000 kg/mol and a polydispersity (PD) of 1-2. The block copolymer exhibits a film pitch (L_0) of 10-100 nm. The block copolymer is a poly(methyl methacrylate)-b-poly((trimethyl silyl) methyl methacrylate) diblock copolymer. The poly (methylmethacrylate) volume fraction (Wf_PMMA) of the diblock copolymer is 0.69-0.83.;COPYRIGHT KIPO 2013
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