Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer

摘要

We have demonstrated directed self-assembly of poly(styrene-b- dimethylsiloxiane) (PS-b-PDMS) down to sub-10-nm half-pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self-assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub-10-nm stripe pattern along variety of grating shape.