METHOD FOR MANUFACTURING A FIN FIELD EFFECT TRANSISTOR HAVING A STABLE ELECTRICAL CHARACTERISTIC

摘要

PURPOSE: A method for manufacturing a fin field effect transistor is provided to form a fin body of uniform width by preventing the variation of a deposition thickness.;CONSTITUTION: A first thin film (102) is formed on a semiconductor substrate (100). A second thin film (104) is formed on the semiconductor substrate. The second thin film is patterned. A second pattern is formed on the first thin film. A third thin film is formed along the surface profile of the first thin film.;COPYRIGHT KIPO 2013