PHOTOMASKS HAVING PATTERNS FOR EUV LIGHT AND PATTERNS FOR DUV LIGHT

摘要

PURPOSE: A photomask is provided to be used in a photolithography system using EUV light and a photolithography system using DUV light. CONSTITUTION: Photomasks (100A-100C) comprise a photomask substrate (5), a reflecting layer (45) installed on the front side of a first region of a photomask substrate and reflecting EUV light, an absorption pattern absorbing the EUV light by being installed on the reflecting layer, and an opaque pattern (35) directly installed on the front side of a second region of the photomask substrate and blocking DUV light. The photomask substrate is transparent to both DUV and EUV light. The absorption pattern selectively exposes the reflecting layer. The opaque pattern selectively exposes the surface of the photomask substrate, and absorbs the EUV light. An opaque layer is formed in between the photomask substrate and the reflecting layer.