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Method for Wafer Dicing and Drilling through Anisotropic Etching after Local Amorphization using Laser Beam
Method for Wafer Dicing and Drilling through Anisotropic Etching after Local Amorphization using Laser Beam
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机译:激光局部非晶化后通过各向异性刻蚀进行晶圆划片和钻孔的方法
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摘要
PURPOSE: An anisotropic etching method and a dicing and drilling method using the same are provided to prevent the chipping of a wafer in the dicing and drilling operations. CONSTITUTION: A coating layer(20) is formed on one side of a wafer(10). The wafer is comprised of silicon or sapphire. The coating layer is eliminated by radiating laser. An establishment portion of the thickness of the wafer becomes amorphous material. A laser machining portion of the wafer is etched. The coating layer is one among a photosensitive polymer, a silicon nitride, and a silicon oxide.
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