首页> 外文会议>Photon Processing in Microelectronics and Photonics IV >LASER TECHNOLOGY FOR WAFER DICING AND MICROVIA DRILLING FOR NEXT GENERATION WAFERS
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LASER TECHNOLOGY FOR WAFER DICING AND MICROVIA DRILLING FOR NEXT GENERATION WAFERS

机译:下一代晶圆晶圆切割和微孔钻孔的激光技术

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摘要

Laser micromaching systems are being used in mainstream high-volume semiconductor applications. Two of those processes, via drilling and thin wafer dicing, are discussed in this paper. Via drilling has been proven viable for forming through chip and blind vias. The inherent flexibility of the laser process makes it possible to control via depth, diameter and sidewall slope. As a mask-less process, laser via drilling can be cost affective and highly flexible in its application. Thin wafer dicing reduces the breakage and damage to thin silicon wafers. A new process has been developed that improves the die strength of laser singulated devices beyond that obtained using conventional sawing techniques.
机译:激光微加工系统已用于主流的大批量半导体应用中。本文讨论了其中两个过程,分别是钻孔和薄晶圆切割。事实证明,通孔钻孔可用于形成芯片通孔和盲孔。激光工艺的固有灵活性使控制通孔深度,直径和侧壁斜率成为可能。作为一种无掩膜工艺,通过钻孔进行激光打孔可以节省成本,并且在应用中具有很高的灵活性。薄晶圆划片减少了薄硅晶圆的破损和损坏。已经开发出一种新工艺,该工艺可以提高激光分离器件的芯片强度,使其超过使用常规锯切技术获得的芯片强度。

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