Non-polar or Semi-polar Group III-Nitride Based Light Emitting Diode and Fabrication Method Thereof

摘要

PURPOSE: A non-polar or semi-polar III group nitride based light emitting diode and a manufacturing method thereof are provided to improve light extraction efficiency by forming a roughness in a cavity. CONSTITUTION: A substrate includes a growth surface of a non-polar or semi-polar epitaxial layer. A first III group nitride layer(102) is grown on a substrate. A second III group nitride layer(104) is grown on the first III group nitride layer with a lateral growth method and includes one or more cavities(105) inside. A light emitting diode structure is grown on the second III group nitride layer. One region of the cavity shows N-polarity.