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Efficiency enhanced semiconductor device using moth-eye structure and Its manufacturing method

机译:使用蛾眼结构的效率提高的半导体器件及其制造方法

摘要

PURPOSE: A semiconductor device with high efficiency using a moth-eye structure and a manufacturing method thereof are provided to improve luminous efficiency by forming the moth-eye structure in a light receiving area. CONSTITUTION: A light emitting structure is comprised of a first semiconductor layer, an active layer, and a semiconductor layer. A part of the first semiconductor layer with a preset width is exposed by etching a part of the semiconductor layer and the active layer. A first electrode(306) is formed on the exposed area of the first semiconductor layer. A second electrode(307) is formed on the second semiconductor layer. A nano sized moth-eye structure(308) is formed on the lower side of the first semiconductor layer.
机译:用途:提供一种使用蛾眼结构的半导体装置及其制造方法,以通过在受光区域形成蛾眼结构来提高发光效率。构成:发光结构包括第一半导体层,有源层和半导体层。通过蚀刻半导体层和有源层的一部分来暴露具有预定宽度的第一半导体层的一部分。在第一半导体层的暴露区域上形成第一电极(306)。在第二半导体层上形成第二电极(307)。纳米级蛾眼结构(308)形成在第一半导体层的下侧上。

著录项

  • 公开/公告号KR101246735B1

    专利类型

  • 公开/公告日2013-03-25

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100069353

  • 发明设计人 김상묵;백종협;박준모;

    申请日2010-07-19

  • 分类号H01L33/22;H01L33/20;H01L33/12;

  • 国家 KR

  • 入库时间 2022-08-21 16:25:30

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