Operating method of nonvolatile memory device having three-level nonvolatile memory cells and nonvolatile memory device using the same

摘要

3 - level non-volatile memory cell including a non-volatile memory device and a method for using a drive method non-volatile memory device that is provided . A drive method of a nonvolatile memory device including the 3- level non-volatile memory cell comprises a first to third non-volatile memory cells , and each non-volatile memory cell can store one of the first to third data , third data is the first to provide a memory cell array corresponding to a respective different first through third resistance level, and the light for a first period of the operation , and write the first data in the first non-volatile memory cells , a third light to the third data in non-volatile memory cell, during a second interval of the write operation, which includes the second light for the second data to the non-volatile memory cell .