GROUP III-NITRIDE BASED RESONANT CAVITY LIGHT EMITTING DEVICES FABRICATED ON SINGLE CRYSTAL GALLIUM NITRIDE SUBSTRATES

摘要

In the method of resonance pore-emitting device, a seed crystal of gallium nitride (14) and source material (30, ) is, the area - is arranged in the furnace (sealed vessel (containing nitrogen arranged on the second 10), the heating fluid (44) disposed 50). Gallium nitride material is grown on a seed gallium nitride crystal 14 to produce a single crystal gallium nitride substrate (106, 106 '). The growth is temporarily varying thermal gradient (100, 100 ', 102, 102'), a seed gallium nitride crystal 14 and the source material 30 is applied between, for increasing the growth rate during at least a portion of the growth includes. Group III-nitride layer of the stack 112, the first mirror sub-stack 116, and at least one light emitting device 0 people cavity (108,150,160,170,180) adapted to be made of the active region ( 120) including, a single crystal gallium nitride substrate (106, 106 ') are deposited on a.