Design of Gallium Nitride Resonant Cavity Light-Emitting Diodes on Si Substrates

摘要

The efficiency of semiconductor light-emitting diodes (LEDs) has continuously improved since the first fabrication of an infrared device in 1960. The key metric has been the external quantum efficiency, which describes the number of photons externally radiated per injected electron. Rapid initial progress was achieved in enhancing the carrier injection efficiency through bandgap engineering in heterostructure and, subsequently, quantum well devices.