SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING

摘要

vertical channel and having a junction gate type field effect transistor self-aligned regrowth and a method of manufacturing such a device is described. How are the growth of the semiconductor material and optionally and / or selectively removed by use of a technique of forming a pn junction in a bottom surface of the trench gate and the source of separating fingers along the side portions of the channel . Method for producing a bipolar junction transistor , and such an apparatus having a self-aligned base contact region is described also re-growth . The semiconductor device can be manufactured in the silicon carbide .