OXIDE SPUTTERING TARGETS HAVING THE EXCELLENT STABILITY OF AN OXIDE THIN FILM TRANSISTOR CAPABLE OF INCREASING A MOBILITY CHARACTERISTIC AND A THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: An oxide sputtering targets having the excellent stability of an oxide thin film transistor and a thin film transistor using the same are provided to reduce light sensitivity by reducing changes in the properties of a target.;CONSTITUTION: A gate electrode (G1) is formed on a substrate. The gate electrode is made of an electrode material. The gate electrode is formed under a channel layer (A1). The channel layer is formed on a source electrode (S1) and a drain electrode (D1). A gate insulating layer is formed on the substrate.;COPYRIGHT KIPO 2013;[Reference numerals] (A1) Channel layer; (B) Substrate; (D1) Drain electrode; (G1) Gate electrode; (GI1) Insulation layer; (P1) Protection layer; (S1) Source electrode