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The use of an emission from the wafer can be independent active wafer temperature may generally device, method, apparatus and the machine readable medium

机译:来自晶片的发射的使用可以是独立的有源晶片温度,通常可以是装置,方法,设备和机器可读介质

摘要

A method with:Selecting a edge support (120) from a plurality of support beams with a plurality of different emission capability for use in a wafer processing device, wherein the selecting a tuning of a heating rate of the selected edge support (120) with a heating rate of a wafer formed thereon with a plurality of devices or parts of devices; thenCooling a on the edge supports (120) of a machining wafer edge resting in the case of a first heating of the machining wafer; thenMachining or forming a plurality of devices or parts of devices on the machining wafer; and thenHeating of the machining wafer with the plurality of devices or parts of the devices in the case of a second heating.
机译:一种具有以下方法的方法:从具有多种不同发射能力的多个支撑梁中选择边缘支撑件(120),以用于晶片处理设备,其中,选择所选择的边缘支撑件(120)的加热速率的调整包括:具有多个装置或装置的一部分的在其上形成的晶片的加热速率;然后,在第一次加热加工晶片的情况下冷却在加工晶片边缘的边缘支撑件(120)上的冷却;然后在加工晶片上加工或形成多个器件或器件的一部分;然后在第二次加热的情况下用多个装置或装置的一部分加热加工晶片。

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