首页> 外国专利> Electronic switch e.g. n-channel MOSFET, for controlling e.g. windscreen wiper in automobile industry, has suppresser diode switchable parallel to switch to protect against over-voltage, where suppresser diode is integrated into housing

Electronic switch e.g. n-channel MOSFET, for controlling e.g. windscreen wiper in automobile industry, has suppresser diode switchable parallel to switch to protect against over-voltage, where suppresser diode is integrated into housing

机译:电子开关例如n沟道MOSFET,用于控制例如汽车行业的雨刷器,其抑制二极管可并联切换以防止过压,其中抑制二极管集成在外壳中

摘要

The switch (1) i.e. n-channel MOSFET (2), has an integrated switching circuit formed on a semiconductor substrate (10) and enclosed by a housing. A suppresser diode (7) is assigned to the switch and formed in a separate manner and switchable parallel to the switch to protect against over-voltage. The suppresser diode is integrated into the housing. A power input contact of the semiconductor substrate is attached to a cooling tab. A power contact of the suppresser diode and a power contact of the semiconductor substrate are directly attached to a pin by bonding wires.
机译:开关(1)即n沟道MOSFET(2)具有形成在半导体衬底(10)上并被外壳包围的集成开关电路。抑制二极管(7)分配给开关,并以单独的方式形成,并且可与开关并联切换以防止过电压。抑制二极管集成在外壳中。半导体衬底的电源输入触点被附接到冷却片。抑制二极管的电源触头和半导体基板的电源触头通过接合线直接附接到引脚。

著录项

  • 公开/公告号DE102011051315A1

    专利类型

  • 公开/公告日2012-12-27

    原文格式PDF

  • 申请/专利权人 HELLA KGAA HUECK & CO.;

    申请/专利号DE20111051315

  • 发明设计人 FUISTING MANFRED;

    申请日2011-06-24

  • 分类号H01L25/16;H01L29/861;H01L23/52;

  • 国家 DE

  • 入库时间 2022-08-21 16:22:27

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号