Electronic device has bipolar transistor whose base is provided with high concentration dopant regions disconnected by region having dopant with lower concentration

摘要

The electronic device has a bipolar transistor (1) having an emitter (4), a base and a collector (2). The base has two regions having dopants with higher concentration that are formed in an electrically active region of the base and in the vicinity of the surface of the base area. The high concentration dopant regions are disconnected by a region having dopant with lower concentration. An independent claim is included for a method for manufacturing electronic device.