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Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
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机译:具有掺杂剂浓度不同的多层源极/漏极区的半导体器件及其制造方法
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摘要
A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.
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