METHOD, APPARATUS, AND SYSTEM FOR REDUCING DOPANT CONCENTRATIONS IN CHANNEL REGIONS OF FINFET DEVICES

摘要

We disclose semiconductor devices, comprising a semiconductor substrate comprising a substrate material; and a plurality of fins disposed on the substrate, each fin comprising a lower region comprising the substrate material, a dopant region disposed above the lower region and comprising at least one dopant, and a channel region disposed above the dopant region and comprising a semiconductor material, wherein the channel region comprises less than 1×10¹⁸ dopant molecules/cm³, as well as methods, apparatus, and systems for fabricating such semiconductor devices.